于Nat. Commun.、Adv. Mater.等国际一流期刊共计发表SCI论文30余篇，其中2篇被选为封面报道；主笔撰写英文专著Ultrawide Bandgap Semiconductor第九章Material Epitaxy of AlN Thin Films。
主持2026年广东省自然科学基金优秀青年项目。
《氮化铝单晶复合衬底》项目荣获2023年伦敦发明展金奖。
已获授权国家发明专利14项、实用新型2项。
代表性成果
S. Liu, T. Lu, Y. Yuan*, J. Cao, W. Wan, T. Li, T. Wang, Z. Chen, X. Sun, X. Wang*. High Quality, Ultrathin AlN Layers with Atomically Flat Surface for Deep UV LED. Adv. Funct. Mater., 35(38):2503580 (2025)
S. Liu, BP. Ratiu, H. Jia, Z. Yan, K.M. Wong, M. Martin, M. Tang, T. Baron, H. Liu, Q. Li*, Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon, Applied Physics Letters, 125(8) (2024).
S. Liu, Y. Yuan*, L. Huang, J. Zhang, T. Wang, T. Li, J. Kang, L. Luo, Z. Chen, X. Sun, and X. Wang*, Drive high power UVC-LED wafer into low-cost 4-inch era: effect of strain modulation, Adv. Funct. Mater., 32(19): 2112111 (2022).
S. Liu, W. Luo, D. Li, Y. Yuan, W. Tong, J. Kang, Y. Wang, D. Li, X. Rong, T. Wang, Z. Chen, Y. Li, H. Wang, W. Wang, J. Hoo, L. Yan, S. Guo, B. Shen, Z. Cong*, and X. Wang*. Sec-Eliminating the SARS-CoV-2 by AlGaN Based High Power Deep Ultraviolet Light Source, Adv. Funct. Mater., 31(7): 2008452(2021).
S. Liu, Y. Yuan*, S. Sheng, T. Wang, J. Zhang, L. Huang, X. Zhang, J. Kang, W. Luo, Y. Li, H. Wang, W. Wang, C. Xiao, Y. Liu, Q. Wang, and X. Wang*, Four-inch high quality crack-free AlN layer grown on a high-temperature annealed AlN template by MOCVD. Journal of Semiconductors, 42(12), 122804(2021).
S. Liu, J. Hoo, Z. Chen, L. Yan, T. Wang, S. Sheng, X. Sun, Y. Yuan, S. Guo, and X. Wang*, Effect of a Lateral Overgrowth Process on the Strain Evolution of AlN Films Grown on a Nanopatterned Sapphire Substrate for Ultraviolet‐C Light‐Emitting Diode Applications. physica status solidi (RRL), 15(11), 2100363(2021).
